In:
SID Symposium Digest of Technical Papers, Wiley, Vol. 44, No. S1 ( 2013-09), p. 285-288
Abstract:
In this study, the authors report high‐quality amorphous Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) thin film transistors (TFTs) fabricated using a new back‐channel‐etch (BCE) process flow on Polyethylene Naphthalate (PEN) foil. The BCE flow allows a better scalability of TFTs for high‐resolution backplanes and related circuits. The maximum processing temperature was limited to less than 165 o C in order to ensure good overlay accuracy ( 〈 1µm) on foil. The presented process flow differs from to previously reported by defining the Mo S/D contacts by dry etch prior to a‐IGZO patterning. The TFTs show good electrical performance, including field‐effect mobilities in the range of 15.0cm 2 /(V.s), sub‐threshold slopes of 0.3V/decade and off‐currents 〈 1.0pA on foil. Finally, the applicability of this new BCE process flow was demonstrated for TFT backplane driving a 32 x 32 active‐matrix organic light‐emitting diode (AMOLED) display.
Type of Medium:
Online Resource
ISSN:
0097-966X
,
2168-0159
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
2526337-7