In:
Surface and Interface Analysis, Wiley, Vol. 36, No. 8 ( 2004-08), p. 952-954
Abstract:
GaN is a wide direct band‐gap ( E g ∼ 3.4 eV) semiconductor which is attractive for optical devices. Trivalent erbium (Er 3+ ) is an efficient luminescent centre with an atom‐like emission at 1540 nm. Typical GaN thin films are fabricated by chemical gas‐phase deposition or by epitaxy. Our GaN films were deposited by RF magnetron sputtering using gallium targets and a 3:7 nitrogen–argon mixture. The thickness of the deposited samples was typically 1–2 µm. For Er doping, pellets of metallic Er were put on top of the Ga target. The goal of erbium doping is to reach a concentration sufficient for optical activity. The composition of prepared layers was checked by nuclear analytical methods. The GaN stoichiometry, O admixture and Er dopant up to depths of 600 nm was checked by RBS using 2.4 MeV protons and 2.2 MeV alpha particles. The H impurity was checked by ERDA with 2.7 MeV alpha particles. The structure of fabricated GaN films was checked by x‐ray diffraction, Raman spectroscopy, absorption spectra and photoluminescence spectra. The possibility of fabrication of GaN films containing Er is verified. The H concentration originating from residual contamination of the Ar–N 2 mixture can be reduced to some degree by annealing. Copyright © 2004 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
0142-2421
,
1096-9918
Language:
English
Publisher:
Wiley
Publication Date:
2004
detail.hit.zdb_id:
2023881-2
