In:
Surface and Interface Analysis, Wiley, Vol. 43, No. 1-2 ( 2011-01), p. 609-611
Abstract:
D & TOF‐SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle‐type defects. In this paper D & ToF‐SIMS are used to identify metals in the P‐type buried layer of BiCMOS transistors and eliminate them in order to improve the overall device performance and process yield. Copyright © 2010 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
0142-2421
,
1096-9918
Language:
English
Publisher:
Wiley
Publication Date:
2011
detail.hit.zdb_id:
2023881-2