In:
Nature Communications, Springer Science and Business Media LLC, Vol. 13, No. 1 ( 2022-04-28)
Kurzfassung:
Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, an organic ternary logic inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory is employed to control the channel conductance systematically, thus realizing the stabilized T-inverter operation. The 3-dimensional (3D) T-inverter is fabricated in a vertically stacked form based on all-dry processes, which enables the high-density integration with high device uniformity. In the flash memory, ultrathin polymer dielectrics are utilized to reduce the programming/erasing voltage as well as operating voltage. With the optimum programming state, the 3D T-inverter fulfills all the important requirements such as full-swing operation, optimum intermediate logic value (~ V DD /2), high DC gain exceeding 20 V/V as well as low-voltage operation ( 〈 5 V). The organic flash memory exhibits long retention characteristics (current change less than 10% after 10 4 s), leading to the long-term stability of the 3D T-inverter. We believe the 3D T-inverter employing flash memory developed in this study can provide a useful insight to achieve high-performance MVL circuits.
Materialart:
Online-Ressource
ISSN:
2041-1723
DOI:
10.1038/s41467-022-29756-w
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2022
ZDB Id:
2553671-0
