In:
npj Quantum Materials, Springer Science and Business Media LLC, Vol. 2, No. 1 ( 2017-03-20)
Abstract:
Atomic defects are easily created in the single-layer electronic devices of current interest and cause even more severe influence than in the bulk devices since the electronic quantum paths are obviously suppressed in the two-dimensional transport. Here we find a drop of chemical solution can repair the defects in the single-layer MoSe 2 field-effect transistors. The devices’ room-temperature electronic mobility increases from 0.1 cm 2 /Vs to around 30 cm 2 /Vs and hole mobility over 10 cm 2 /Vs after the solution processing. The defect dynamics is interpreted by the combined study of the first-principles calculations, aberration-corrected transmission electron microscopy, and Raman spectroscopy. Rich single/double Selenium vacancies are identified by the high-resolution microscopy, which cause some mid-gap impurity states and localize the device carriers. They are found to be repaired by the processing with the result of extended electronic states. Such a picture is confirmed by a 1.5 cm −1 red shift in the Raman spectra.
Type of Medium:
Online Resource
ISSN:
2397-4648
DOI:
10.1038/s41535-017-0018-7
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2017
detail.hit.zdb_id:
2882263-8
