In:
Scientific Reports, Springer Science and Business Media LLC, Vol. 8, No. 1 ( 2018-10-04)
Abstract:
Polycrystalline cadmium telluride (CdTe) X-ray photodetector with advanced performance was fabricated in a Schottky diode form by direct thermal deposition (evaporation) on pixelized complementary metal oxide semiconductor (CMOS) readout panel. Our CdTe X-ray detector shows such a variety of benefits as relatively low process temperature, low cost, low operation voltage less than 40 V, and higher sensitivity and spatial resolution than those of commercial a-Se detectors. CdTe has cubic Zinc Blende structure and maintains p-type conduction after growth in general. For low voltage operation, we succeeded in Cl doping at all stage of CdTe film deposition, and as a result, hole concentration of p-type CdTe was reduced to ~10 12 cm −3 from ~10 15 cm −3 , and such concentration reduction could enable our Schottky diode with Ti electrode to operate at a reverse bias of less than 40 V. Our CdTe Schottky diode/CMOS pixel array as a direct conversion type imager demonstrates much higher resolution X-ray imaging in 7 × 9 cm 2 large scale than that of CsI/CMOS array, an indirect conversion imager. To our limited knowledge, our results on polycrystalline CdTe Schottky diode/CMOS array would be very novel as a first demonstration of active pixel sensor system equipped with directly deposited large scale X-ray detector.
Type of Medium:
Online Resource
ISSN:
2045-2322
DOI:
10.1038/s41598-018-33240-1
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2018
detail.hit.zdb_id:
2615211-3
