In:
Scientific Reports, Springer Science and Business Media LLC, Vol. 13, No. 1 ( 2023-08-22)
Kurzfassung:
Top gate a-InGaZnO (IGZO) thin-film transistors (TFTs) annealed at high temperature show excellent initial current–voltage (I–V) characteristics. However, when they are exposed to positive gate bias for a long time, hump can occur in the subthreshold region. This abnormal hump is accelerated at a higher positive gate voltage and mitigate by a negative gate voltage. While the strength of the hump is irrelevant to a change in channel width, it relies significantly on channel length. This phenomenon might be due to mobile Na ions diffused from a glass substrate migrating toward the back and edge side of the IGZO semiconductor by a vertical gate electric field. When a layer of Al 2 O 3 is formed between the IGZO semiconductor and the glass substrate, the hump phenomenon could be successfully solved by serving as a barrier for Na ions moving into the IGZO.
Materialart:
Online-Ressource
ISSN:
2045-2322
DOI:
10.1038/s41598-023-40664-x
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2023
ZDB Id:
2615211-3