In:
Chemical Science, Royal Society of Chemistry (RSC), Vol. 13, No. 20 ( 2022), p. 5944-5950
Abstract:
Solution processes have been widely used to construct chalcogenide-based thin-film optoelectronic and electronic devices that combine high performance with low-cost manufacturing. However, Ge( ii )-based chalcogenide thin films possessing great potential for optoelectronic devices have not been reported using solution-based processes; this is mainly attributed to the easy oxidation of intermediate Ge( ii ) to Ge( iv ) in the precursor solution. Here we report solution-processed deposition of Ge( ii )-based chalcogenide thin films in the case of GeSe and GeS films by introducing hypophosphorous acid as a suitable reducing agent and strong acid. This enables the generation of Ge( ii ) from low-cost and stable GeO 2 powders while suppressing the oxidation of Ge( ii ) to Ge( iv ) in the precursor solution. We further show that such solution processes can also be used to deposit GeSe 1− x S x alloy films with continuously tunable bandgaps ranging from 1.71 eV (GeS) to 1.14 eV (GeSe) by adjusting the atomic ratio of S- to Se-precursors in solution, thus allowing the realization of optimal-bandgap single-junction photovoltaic devices and multi-junction devices.
Type of Medium:
Online Resource
ISSN:
2041-6520
,
2041-6539
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2559110-1
