In:
Nanoscale, Royal Society of Chemistry (RSC), Vol. 14, No. 14 ( 2022), p. 5462-5471
Abstract:
Tin disulfide (SnS 2 ) has attracted much attention as a novel two dimensional material due to its potential applications in electronics and optoelectronics. In this work, we investigated the optical properties of ultra-thin SnS 2 film samples (∼8 nm) via spectroscopic ellipsometry, and found that SnS 2 maintains a relatively high imaginary part of the dielectric constant ( ε 2 ) in the range of 256–377 nm indicating high optical response. The carrier transport properties of SnS 2 were investigated considering full mode-resolved electron–phonon couplings, which reveal that the intervalley scatterings between degenerate valley (peaks) states via the fifth optical branch phonons play a dominant role in electron scattering, while ZA phonons dominate the hole scattering. The calculated electron mobility is ∼50 cm 2 V −1 s −1 which is close to previously reported experimental results. By considering full el–ph interactions based on the rigid-band approximation, the maximum value of the thermoelectric figure of merit zT reaches 0.43 at 700 K. Our work not only reveals the promising applications of SnS 2 in the fields of electronics and optoelectronics, but also showcases the computational framework for precise calculations of thermoelectric performances.
Type of Medium:
Online Resource
ISSN:
2040-3364
,
2040-3372
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2515664-0
