In:
EPJ Photovoltaics, EDP Sciences, Vol. 11 ( 2020), p. 10-
Abstract:
In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber layer growth. Contacts are formed during absorber layer growth and visualized with scanning electron microscopy (SEM). To assess the passivating qualities, HfO x was applied in a metal-insulator-semiconductor (MIS) structure, and it demonstrates a low interface trap density in combination with a negative density of charges. Since we used ultra-thin devices that are ideal to probe improvements at the rear, solar cell results indicated improvements in all cell parameters by the addition of 2 nm thick HfO x passivation layer with contact openings.
Type of Medium:
Online Resource
ISSN:
2105-0716
DOI:
10.1051/epjpv/2020007
Language:
English
Publisher:
EDP Sciences
Publication Date:
2020
detail.hit.zdb_id:
2640487-4