In:
Applied Physics Letters, AIP Publishing, Vol. 54, No. 25 ( 1989-06-19), p. 2571-2573
Abstract:
A strained layer of Si1−x Gex (As)/Si has been grown by molecular beam epitaxy (MBE) with the As dopant introduced by 1 keV ion implantation during growth. Analysis of the layer was made using secondary-ion mass spectrometry (SIMS), Rutherford backscattering (RBS), and proton-induced x-ray emission (PIXE)/channeling, using 2 MeV H+ ions. The layer thickness (∼1.4 μm) and composition (x∼0.015; nAs ∼6×1018 cm−3) measurements by SIMS, RBS, and PIXE were in agreement. RBS, PIXE/channeling showed that the crystalline quality of the strained layer was equivalent to that of the Si substrate. The substitutional fraction (∼0.75) of the As dopant was determined by PIXE/channeling.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1989
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0