In:
Applied Physics Letters, AIP Publishing, Vol. 58, No. 7 ( 1991-02-18), p. 720-722
Kurzfassung:
We have fabricated ultranarrow InGaAs/InP buried quantum well wires by means of electron beam lithography and reverse mesa wet etching. Owing to the reverse mesa etching profile, the lateral dimension of the wires has been reduced to 10 nm. Furthermore, we investigated the optical characteristics of these wires by photoluminescence and observed, for the first time, clear dependence of luminescence wavelength upon the wire width even for wires down to 10 nm, which is well explained by the theoretical calculation. The blue-shifted shoulder structures were also observed and they were assigned theoretically to be the second quantized level.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
1991
ZDB Id:
211245-0
ZDB Id:
1469436-0
