In:
Applied Physics Letters, AIP Publishing, Vol. 60, No. 17 ( 1992-04-27), p. 2121-2122
Abstract:
In this letter, we report the influence of silicon donors on the linewidth of intersubband transitions 1–2 in GaAs/Ga0.75Al0.25As square quantum wells. We clearly demonstrate that the relative position between the ionized impurities and the center of the quantum wells is a major factor on the linewidth of the mid-infrared (10 μm) transitions. Besides, it is shown that the scattering processes are more influenced by temperature when donors are far from the quantum well (QW).
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0