In:
Applied Physics Letters, AIP Publishing, Vol. 63, No. 21 ( 1993-11-22), p. 2947-2948
Abstract:
High-resolution electron microscopy of wurtzite type CdSe epilayers grown on (111) GaAs revealed that interfacial misfit dislocations are perfect 60° dislocations with Burgers vectors parallel to the interface. Glide is therefore limited to the (0001) interface plane and the extension of dislocations into the epilayer is suppressed. Single-beam bright field imaging shows that the 7% mismatched epilayer is free of a dislocation network in its volume.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1993
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0