In:
Applied Physics Letters, AIP Publishing, Vol. 63, No. 11 ( 1993-09-13), p. 1525-1527
Abstract:
The deposition of in situ heavily boron-doped polycrystalline silicon (poly-Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3×1020 cm−3 were obtained for the as-deposited films grown at 550 °C. For boron concentration beyond this level, the crystallinity of poly-Si films degraded with increasing boron concentration, which resulted in an anomalous rise in resistivity. This crystallinity degradation occurred at a higher rate for films grown on a SiO2 surface than those grown on an undoped poly-Si surface. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface. Under a high B2H6 flux condition, a large amount of boron atoms would accumulate on the SiO2 surface before the formation of Si nuclei, and thus disturbs the subsequent film deposition and grain growth processes.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1993
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
