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Hydrothermal epitaxy of highly oriented TiO2 thin films on silicon

Chen, Qianwang ; Qian, Yitai ; Chen, Zuyao ; [weitere]

AIP Publishing ; 1995

In: Applied Physics Letters Vol. 66, No. 13 ( 1995-03-27), p. 1608-1610

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In: Applied Physics Letters, AIP Publishing, Vol. 66, No. 13 ( 1995-03-27), p. 1608-1610

Kurzfassung: Highly oriented thin films (0.15 μm) of titania on Si (100) substrates have been prepared first by hydrothermal treatment of TiO42− solution (0.6–1.2M) at relatively low temperatures. Films made at 100–200 °C contain only the anatase phase with (112) orientation, adhere well to the substrates. The hydrothermal temperature, time, and the pH value of TiO42− solution are the critical parameters determining the formation of films.

Materialart: Online-Ressource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.113867

RVK:

UA 1000

Sprache: Englisch

Verlag: AIP Publishing

Publikationsdatum: 1995

ZDB Id: 211245-0

ZDB Id: 1469436-0