In:
Applied Physics Letters, AIP Publishing, Vol. 67, No. 1 ( 1995-07-03), p. 121-123
Abstract:
N-channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on-off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1995
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0