In:
Applied Physics Letters, AIP Publishing, Vol. 70, No. 5 ( 1997-02-03), p. 643-645
Abstract:
GaN thin layers (200 Å) were grown by gas-source molecular beam epitaxy on c-plane Al2O3 substrates. Transmission electron microscopy reveals that two different epitaxial relationships may occur. The well-known GaN orientation with the c axis perpendicular to the Al2O3 surface and [11̄00]GaN‖[112̄0] Al2O3 is observed when the substrate is nitridated prior to the growth. On the other hand, GaN layers deposited on bare Al2O3 surfaces exhibit a different crystallographic orientation: [112̄0]GaN‖[11̄00] Al2O3 and [11̄03]GaN‖[112̄0] Al2O3. This corresponds to a tilt of about 19° of the c axis with respect to the substrate surface.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1997
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0