In:
Applied Physics Letters, AIP Publishing, Vol. 70, No. 23 ( 1997-06-09), p. 3119-3121
Kurzfassung:
Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
1997
ZDB Id:
211245-0
ZDB Id:
1469436-0