In:
Applied Physics Letters, AIP Publishing, Vol. 72, No. 7 ( 1998-02-16), p. 759-761
Abstract:
We report on ultrafast excitonic nonlinearities in ion-implanted InGaAs/InAlAs multiple quantum wells. We find that irradiation with energetic O+ and Ni+ ions can reduce the carrier lifetime from 1.6 ns down to 1.7 ps without significantly altering the excitonic absorption properties, making efficient fast saturable absorbers in the 1.3–1.5 μm wavelength range.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1998
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
