In:
Applied Physics Letters, AIP Publishing, Vol. 74, No. 15 ( 1999-04-12), p. 2146-2148
Kurzfassung:
Doppler broadening positron annihilation spectroscopy is used to measure the concentration, spatial distribution, and size of open-volume defects in low dielectric constant (low-k) hydrogen- and methyl-silsesquioxane thin films. A simple correlation between the number of open-volume defects and the dielectric constant is obtained. In addition, the depth-resolving capability enables profiling of the local electronic environment of open-volume defects as a function of depth. The potential for using this technique for measuring k as a function of film depth is also discussed.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
1999
ZDB Id:
211245-0
ZDB Id:
1469436-0