In:
Applied Physics Letters, AIP Publishing, Vol. 77, No. 19 ( 2000-11-06), p. 2988-2990
Abstract:
The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%–25% (grown with metal–organic chemical-vapor deposition). A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2000
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0