In:
Applied Physics Letters, AIP Publishing, Vol. 81, No. 12 ( 2002-09-16), p. 2279-2281
Abstract:
We introduce a microprobe technique based on the x-ray standing wave method (XSW) demonstrating that structural analysis can be achieved with chemical sensitivity on a microscopic scale. We apply this XSW microscopy technique to study an epitaxially grown GaAs/Al0.1Ga0.9As/GaAs(001) heterostructure in cross section. We focus the x-ray beam by a refractive lens onto the cleaved sample and analyze the constituent elements within the 4 μm thick Al0.1Ga0.9As layer resolving the substitutional location of Al. The new micro-XSW technique will permit microscopic examinations of the structure of integrated semiconductor devices or microscopic crystalline grains with chemical sensitivity and structural resolution on the pm scale.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2002
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0