In:
Journal of Applied Physics, AIP Publishing, Vol. 94, No. 6 ( 2003-09-15), p. 3883-3890
Kurzfassung:
The diffusion of boron and phosphorus has been investigated in SiGe grown by molecular beam epitaxy. The analysis was done in relaxed Si1−xGex for x=0, 0.01, 0.12, and 0.24 for B and x=0, 0.07, 0.12, 0.24, and 0.40 for P. B diffusion in relaxed samples shows little effect of changing the Ge content while for P diffusion, increasing Ge content increases the diffusion coefficient from Si up to Si0.76Ge0.24. This is explained by a pairing of B and Ge atoms retarding the diffusion. B diffusion in compressively strained Si0.88Ge0.12 and Si0.76Ge0.24 and tensile strained Si and Si0.88Ge0.12 was also investigated. Compressive strain was found to decrease the diffusion coefficient of B and tensile strain to increase it.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2003
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5
