In:
Applied Physics Letters, AIP Publishing, Vol. 83, No. 24 ( 2003-12-15), p. 4990-4992
Kurzfassung:
We have investigated a Zn–Ni solid solution/Ag scheme for use in producing high-quality ohmic contacts for flip-chip light-emitting diodes (LEDs). The as-deposited contact shows nonlinear I–V characteristics. However, oxidizing the contacts at temperatures of 350–550 °C for 1 min in air ambient results in linear I–V behaviors, yielding specific contact resistances of 10−4–10−5 Ω cm2. In addition, LEDs are fabricated with the oxidized Zn–Ni solid solution/Ag contacts and Ag single contacts. The typical I–V characteristics of the LEDs with the annealed Zn–Ni solid solution (2.5 nm)/Ag (200 nm) p-type contact layers reveal a forward-bias voltage of 3.25 V at an injection current of 20 mA, which is much better than that of the LEDs with the Ag (200 nm) contact layers.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2003
ZDB Id:
211245-0
ZDB Id:
1469436-0