In:
Journal of Applied Physics, AIP Publishing, Vol. 39, No. 12 ( 1968-11-01), p. 5498-5502
Kurzfassung:
p-type Ge doped with Ga and In to resistivities ranging from 0.001 to 30 Ω·cm and n-type Ge doped with Sb and As to resistivities ranging from 0.1 to 30 Ω·cm were irradiated with 50 MeV electrons to various doses up to a maximum total integrated flux of 1.0×1019 electrons/cm2. Electrical measurements were performed to determine the effect of irradiation on the temperature dependence (78° to 320°K) of the conductivity, carrier concentration, and Fermi level. After irradiation to relatively high doses (≳1018 electrons/cm2), both types of Ge reach a saturation in the hole concentration which is accompanied by an ultimate value for the Fermi level at Ev+0.220±0.010 eV for all samples studied. Comparison of this result with studies made using fast neutrons shows that the position of the ultimate Fermi level strongly depends on the damaging or ``disordering'' capabilities of the incident radiation. We find that the ultimate Fermi level is positioned closer to the valence band as a result of irradiation by particles capable of imparting a larger maximum recoil energy to the Ge atom. Finally, a comparison is made with the work of others on the ultimate position of the Fermi level for Ge irradiated by 60Co gamma rays and 4.5 MeV electrons which are not sufficiently energetic to produce disordered regions comparable to what is observed in fast-neutron and 50 MeV electron irradiation of Ge.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
1968
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5
