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    Online Resource
    Online Resource
    AIP Publishing ; 2004
    In:  Journal of Applied Physics Vol. 96, No. 4 ( 2004-08-15), p. 2240-2243
    In: Journal of Applied Physics, AIP Publishing, Vol. 96, No. 4 ( 2004-08-15), p. 2240-2243
    Abstract: Described herein is the incorporation of nanocrystalline silicon nc-Si from porous silicon (PSi) in a silica matrix fabricated by the sol-gel technique that yields highly photoluminescent (PL) and optically transparent monoliths with uniformly distributed nc-Si inclusions or nanoclusters. The sample monoliths were prepared with PSi-derived nanoclusters (PSi-n) with average diameters of 14–45nm. Concentrated samples of PSi-n-exhibited blueshifted orange emission bands with maximum peaks between 600 and 750nm with PL emission intensities ten times stronger than those of the original PSi, while diluted samples exhibited UV to blue (350–450nm) emission bands. The PL quantum yield of the typical PSi-n monoliths was 44% higher than the native PSi. Light absorption measurements showed a linear response to laser powers before the saturation threshold at 80mW. PL bleaching following 3h of constant laser power exposure resulted in 90% reduction of the maximum initial PL. Mechanical and thermal stability properties of nc-Si were greatly improved within the silica matrix, demonstrating that PSi-n monoliths’ are more manageable materials that enable the fabrication of samples with high densities of nc-Si for semiconducting and optoelectronic purposes. No special chemical passivation of the nc-Si surfaces was used in the preparation of the PSi-n monoliths. A strong relation between the optical properties of this nanophase material and the size distribution and concentration of nc-Si in the sample is demonstrated.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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