In:
Journal of Applied Physics, AIP Publishing, Vol. 96, No. 6 ( 2004-09-15), p. 3562-3564
Abstract:
We report the study of phase transformation in the nanoindentation of Si by conducting atomic force microscopy. Distinctively high current features with a smallest size of around 20nm have been observed and correspond directly to the generated conductive Si-III and/or Si-XII phases under pressure release. Local current-voltage relationships on the high current sites have also been obtained and found to follow the Fowler-Nordheim tunneling equation.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5