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Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Dier, Oliver ; Sterkel, Martin ; Grau, Markus ; [weitere]

AIP Publishing ; 2004

In: Applied Physics Letters Vol. 85, No. 12 ( 2004-09-20), p. 2388-2389

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In: Applied Physics Letters, AIP Publishing, Vol. 85, No. 12 ( 2004-09-20), p. 2388-2389

Kurzfassung: A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo- and heterojunctions of InAs(Sb) and GaSb to form a low resistive ohmic tunnel junction. The resitivity achieved was as low as 2.6×10−5Ωcm2.

Materialart: Online-Ressource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.1793349

RVK:

UA 1000

Sprache: Englisch

Verlag: AIP Publishing

Publikationsdatum: 2004

ZDB Id: 211245-0

ZDB Id: 1469436-0