In:
Applied Physics Letters, AIP Publishing, Vol. 85, No. 14 ( 2004-10-04), p. 2806-2808
Abstract:
The flatband voltage of Si-based metal–oxide–semiconductor diodes can be controlled by the inclusion of cesium (Cs) in SiO2 layers. The inclusion of Cs can be achieved by two methods: (1) spin-on of cesium chloride aqueous solutions, and (2) evaporation of Cs. The maximum flatband voltage shift of ∼0.8V is achieved by the Cs evaporation method and, in this case, the Cs concentration is estimated to be ∼1013atoms∕cm2 from total reflection x-ray fluorospectroscopy measurements. Even when the Cs concentration is as low as ∼1010atoms∕cm2, ∼0.1V flatband voltage shift can be achieved. The net positive charge of Cs decreases with the Cs concentration.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
