In:
Applied Physics Letters, AIP Publishing, Vol. 86, No. 10 ( 2005-03-07)
Abstract:
We investigate the influence of thermal conditions during solid phase epitaxial regrowth (SPER) on the electrical activation level of boron in preamorphized silicon, both with respect to heating ramp rates and the use of low temperature preanneals. Enhancement of electrically active boron concentration by 36% is observed for activation with the fastest ramp rate (487°C∕s) compared to the slowest one (1°C∕s). An important clustering pathway occurs within the amorphous silicon phase (during low temperature preanneal) prior to completion of the SPER process. In these junctions boron deactivation during isochronal post-annealing is almost independent on the maximum boron activation level.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0