In:
Applied Physics Letters, AIP Publishing, Vol. 86, No. 15 ( 2005-04-11)
Kurzfassung:
In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm-thick GaInAsSb bulk layer, a blueshift of 83meV was found after annealing for 2h at 520°C, whereas for MQW structures the maximum shift was 61meV.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2005
ZDB Id:
211245-0
ZDB Id:
1469436-0
