In:
Applied Physics Letters, AIP Publishing, Vol. 86, No. 21 ( 2005-05-23)
Abstract:
The influence of doping density on the performance of GaAs∕AlGaAs quantum-cascade lasers is presented. A fully self-consistent Schrödinger–Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0