In:
Applied Physics Letters, AIP Publishing, Vol. 86, No. 24 ( 2005-06-13)
Abstract:
Ultrafast photoelectric effects have been observed in La0.7Sr0.3MnO3∕Si p-n junctions fabricated by laser molecular-beam epitaxy. The rise time was ∼210ps and the full width at half-maximum was ∼650ps for the photovoltaic pulse when the junction was irradiated by a 1064nm laser pulse of 25ps duration. The photovoltaic sensitivity was as large as 435mV∕mJ for a 1064nm laser pulse. No such photovoltaic signal was observed with irradiation from a 10.6μm CO2 laser pulse. The results reveal that this phenomenon is an ultrafast photoelectric effect.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0