In:
Applied Physics Letters, AIP Publishing, Vol. 87, No. 14 ( 2005-10-03)
Abstract:
This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34cm2∕Vs and the lowest subthreshold swing, 0.23V∕dec, at a gate length of 2μm. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0