In:
Applied Physics Letters, AIP Publishing, Vol. 89, No. 6 ( 2006-08-07)
Kurzfassung:
The thermal stability of amorphous LaScO3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained & lt;0.1Å of SiO2 at the interface between LaScO3 and silicon. XRD studies showed that the films remained amorphous after annealing in N2 at 700°C, although HRTEM showed structural order on an ∼1nm length scale even in the as-deposited films. By 800°C, the LaScO3 had started to crystallize and formed a ∼5nm thick Sc-deficient interlayer between it and silicon.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2006
ZDB Id:
211245-0
ZDB Id:
1469436-0