In:
Applied Physics Letters, AIP Publishing, Vol. 90, No. 3 ( 2007-01-15)
Kurzfassung:
The writing probability of toggle magnetic random access memory (MRAM) at built-in bias field is studied by micromagnetic simulation and a dual polarity write pulse scheme has been proposed to enhance the toggle probability at low writing field. The critical writing field can be reduced to 19Oe at strong built-in bias field from CoFe(1.0nm)∕CoFeB(2.0nm)∕Ru∕CoFe(5.0nm) pinned layer structure. From the simulation and experimental results, it is proven that the toggle MRAM can be operated at lower writing field by dual polarity write pulse scheme.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2007
ZDB Id:
211245-0
ZDB Id:
1469436-0
