In:
Applied Physics Letters, AIP Publishing, Vol. 90, No. 19 ( 2007-05-07)
Abstract:
A nonvolatile nanocrystal (NC) memory containing a ferritin core was fabricated. A ferritin monolayer was formed through a droplet evaporation technique. High-pressure hydrogen (HP-H2) annealing effectively reduced iron oxide (Fe2O3) to form conductive iron NC. In addition, HP-H2 annealing also improved memory characteristics by passivation of the interface states at Si∕HfO2. The authors observed good memory characteristics, including fast program/erase (P/E) operation, a memory window of 1.75V under ±6V, and a stable memory window up to 104s at 85°C.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0