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    Online Resource
    Online Resource
    AIP Publishing ; 2007
    In:  Journal of Applied Physics Vol. 102, No. 2 ( 2007-07-15)
    In: Journal of Applied Physics, AIP Publishing, Vol. 102, No. 2 ( 2007-07-15)
    Abstract: n -type doping of the molecular organic semiconductor perylene-3,4,9,10-tetracarboxylicdianhydride (PTCDA) by sodium, potassium, and cesium was carried out. The chemical properties of the doping processes were investigated by means of x-ray photoemission and infrared absorption spectroscopy. Simultaneously the evolution of the occupied electronic states around the transport gap was monitored by ultraviolet photoemission spectroscopy. It was found that the doping ratio depends on the ionization energy of the alkali metal, in particular if compared with the highest occupied molecular orbital ionization energy of the formed alkali-PTCDA complex. Additionally, only in the case of cesium doping, an averaged ratio of two alkali metal atoms per PTCDA was found at the surface. In the case of sodium and potassium, averaged surface doping ratios of only 1.3±0.1 alkali metal atoms per PTCDA molecule can be reached. However, in the bulk phase, nearly complete doping can be reached by all three alkali metals.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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