In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 5 ( 2007-07-30)
Kurzfassung:
The authors consider the suitability of carbon nanotubes for use in analog rf amplifiers, where the linearity of the device is critical. They show that in the limit of large electrostatic gate-channel capacitance, their theory predicts that an Ohmically contacted, ballistic carbon-nanotube-based field-effect transistor is inherently linear. While they have not achieved this limit in their experimental work, they compare the theory to experiment in the limit of small electrostatic gate-channel capacitance and find excellent agreement at virtually all bias conditions.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2007
ZDB Id:
211245-0
ZDB Id:
1469436-0