In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 9 ( 2007-08-27)
Abstract:
Amorphous carbon film/n-Si (a-C∕Si) junctions have been fabricated by direct current magnetron sputtering and their current-voltage (I-V) characteristics have been investigated. The results show that the gas pressure has a large effect on the reverse bias I-V characteristics of the junctions. For example, the reverse current can increase by 3300% when the gas pressure decreases from 100000to100Pa. The effect of gas pressure may be attributed to the physisorption process of gas molecules which increases the space charge width and changes the surface states of the junction.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0