In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 12 ( 2007-09-17)
Abstract:
The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13nm-thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (AlOx)-self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+-Si substrate. The AlOx-SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233nF∕cm2 on ITO glass and on n+-Si substrate, respectively, along with a high dielectric strength of 4MV∕cm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92cm2∕Vs, operating at −3V with an on/off current ratio of ∼103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0