In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 19 ( 2007-11-05)
Abstract:
We have investigated the effect of high-pressure deuterium oxide annealing (HPDOA) on metal-alumina-nitride-oxide-silicon-type flash memory device. HPDOA was performed in a high-pressure wet vapor ambient (N2:D2O=10atm:2atm) at 250°C for 5min. HPDOA devices achieved the improvements of blocking oxide quality as well as tunneling oxide/Si interface quality. The improvement of blocking oxide induced the lower charge loss through the blocking oxide, lower leakage current density, lower erase saturation level, and a larger memory window after the program/erase cycles. In addition, the presence of deuterium at the tunneling oxide/Si improved the interface quality by the formation of Si–D bonds.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0