In:
Applied Physics Letters, AIP Publishing, Vol. 92, No. 26 ( 2008-06-30)
Abstract:
The gate leakage behaviors of p- and n-type metal-oxide-semiconductor (p−∕nMOS) capacitors with hafnium silicon oxynitride (HfSiON) gate dielectric were microscopically investigated by electron-beam-induced current (EBIC) technique. Carrier separated EBIC measurement has found that in nonstressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. After voltage stress, traps are induced in nMOS and enhanced electron conduction.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0