In:
Applied Physics Letters, AIP Publishing, Vol. 93, No. 2 ( 2008-07-14)
Abstract:
Current-voltage (I-V) measurements on Al/(core/shell-type CdSe∕ZnS nanoparticles embedded in polymer/indium tin oxide)/glass devices showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the devices showed a counterclockwise hysteresis with a flatband voltage shift due to the existence of the CdSe∕ZnS nanoparticles. The on/off ratio of the electrical bistability for memory devices with a hybrid [poly-N-vinylcarbazole (PVK) and polystyrene (PS)] matrix layer was larger than those for memory devices with a PVK or a PS layer. Possible operating mechanisms for the devices are described on the basis of the I-V and the C-V results.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
