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Magnetostatic field effect on threshold current in a GaAs/Al y GA1- y As double-heterostructure laser

Hsieh, H. C. ; Lee, G. Y.

AIP Publishing ; 1981

In: Journal of Applied Physics Vol. 52, No. 7 ( 1981-07-01), p. 4414-4417

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In: Journal of Applied Physics, AIP Publishing, Vol. 52, No. 7 ( 1981-07-01), p. 4414-4417

Kurzfassung: The magnetostatic field dependence of the threshold current density in a GaAs/AlyGA1-yAs double-heterostructure laser is investigated with the aid of the solution of the electron diffusion equation. The reduction of the threshold current density by increasing the magnetic field strength can be significant when the difference in the energy band gap of the active and inactive layers at the heterojunction is small.

Materialart: Online-Ressource

ISSN: 0021-8979 , 1089-7550

URL: Article

DOI: 10.1063/1.329354

Sprache: Englisch

Verlag: AIP Publishing

Publikationsdatum: 1981

ZDB Id: 220641-9

ZDB Id: 3112-4

ZDB Id: 1476463-5