In:
Journal of Applied Physics, AIP Publishing, Vol. 52, No. 7 ( 1981-07-01), p. 4414-4417
Abstract:
The magnetostatic field dependence of the threshold current density in a GaAs/AlyGA1-yAs double-heterostructure laser is investigated with the aid of the solution of the electron diffusion equation. The reduction of the threshold current density by increasing the magnetic field strength can be significant when the difference in the energy band gap of the active and inactive layers at the heterojunction is small.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1981
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
