In:
Journal of Applied Physics, AIP Publishing, Vol. 64, No. 6 ( 1988-09-15), p. 3304-3306
Abstract:
Internal photoemission has been used to determine the valence- and conduction-band discontinuities (ΔEv and ΔEc) in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions. The method is straightforward, accurate, and assumes a minimum of unknown parameters. We have found ΔEv =(0.43±0.05) eV and ΔEc =(0.34±0.05) eV for GaAs/a-Ge and ΔEv =(0.88±0.05) eV and ΔEc =(0.68±0.05) eV for GaP/a-Ge.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1988
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5