In:
Journal of Applied Physics, AIP Publishing, Vol. 65, No. 9 ( 1989-05-01), p. 3435-3440
Abstract:
The effects of 0.1 and 0.5-nm Al and 0.02-nm Ti interlayers on the Sb/(HgCd)Te system have been investigated with photoelectron spectroscopy using synchrotron radiation. With no interlayer, the Sb forms an abrupt, uniform overlayer with a stoichiometric interface and causes no change in the band bending induced during the cleaving process. With the two Al interlayers Sb exhibits less uniform deposition and diffuses into the semiconductor enough to reverse the additional band bending caused by Al in-diffusion. It also reacts with the elemental Al of the 0.5-nm interlayer to form AlSb. The increased disruption of the (HgCd)Te surface by the Ti interlayer leads to enhanced out-diffusion of Te in addition to Sb clustering and in-diffusion. In this case, Sb is able to compensate for the inversion occurring during cleavage and returns the surface to a nearly flat-band condition.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1989
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
