In:
Applied Physics Letters, AIP Publishing, Vol. 96, No. 21 ( 2010-05-24)
Abstract:
A synthetic polyimide poly[4,4′-bis(4-methloxytriphenylamine)-3,3′-biphenylenehexafluoro-isopropylidenediphthalimide] (MTPA-PI) was designed as a functional material for fabrication of memory devices, and two different switching behaviors were observed in the devices with different bottom electrode materials [indium tin oxide (ITO) or Al] . In an ITO/MTPA-PI/Al device, the memory could be switched on/off with the negative/positive voltage with the ON/OFF current ratios in the order of about 104, while in an Al/MTPA-PI/Al device, it shows different switching behaviors with much higher current ratios (up to 109) as compared with the ITO/MTPA-PI/Al device. The different switching mechanisms based on different bottom electrode devices were also discussed.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0