In:
Journal of Applied Physics, AIP Publishing, Vol. 65, No. 10 ( 1989-05-15), p. 4006-4009
Abstract:
The Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As quantum well structure with a 70-Å-thick well has been successfully fabricated by liquid-phase epitaxy at 685 °C. The transmission electron microscope cross-section technique is applied to study the uniformity of the quantum well and the transition width at the heterojunction interface. An interesting phenomenon observed for the first time during liquid-phase epitaxy growth is that the interface of Al0.05Ga0.95As grown on Al0.35Ga0.65As is rather flat and sharp whereas the opposite growth sequence gives rise to a wavy interface. The transition width is less than 10 Å at the Al0.05Ga0.95As/Al0.35Ga0.65As interface but is about 30–50 Å at the inverted Al0.35Ga0.65As/Al0.05Ga0.95As interface. These values are much less than those reported in the literature. The peak energy of the photoluminescence spectrum reveals the quantum size effect.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1989
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5